STMicroelectronics STGAP2SICSC MOSFET 1, SO-8W, 8 Pin
- Codice RS:
- 208-5078P
- Codice costruttore:
- STGAP2SICSC
- Costruttore:
- STMicroelectronics
Al momento non disponibile
Non sappiamo se questo articolo tornerà in stock, RS intende rimuoverlo a breve dall'assortimento.
- Codice RS:
- 208-5078P
- Codice costruttore:
- STGAP2SICSC
- Costruttore:
- STMicroelectronics
Specifiche
Documentazione Tecnica
Normative
Dettagli prodotto
Trova prodotti simili selezionando uno o più attributi.
Seleziona tutto | Attributo | Valore |
|---|---|---|
| Marchio | STMicroelectronics | |
| Tipo di driver | MOSFET | |
| Numero driver | 1 | |
| Tipo di package | SO-8W | |
| Numero pin | 8 | |
| Tipo montaggio | Superficie | |
| Seleziona tutto | ||
|---|---|---|
Marchio STMicroelectronics | ||
Tipo di driver MOSFET | ||
Numero driver 1 | ||
Tipo di package SO-8W | ||
Numero pin 8 | ||
Tipo montaggio Superficie | ||
The STMicroelectronics STGAP2SICS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and Interface circuitry. The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications. The device is available in two different configurations. The configuration with separated output pins allows to independently optimize turn-on and turn-off by using dedicated gate resistors. The configuration featuring single output pin and Miller CLAMP function prevents gate spikes during fast commutations in half-bridge topologies. Both configurations provide high flexibility and bill of material reduction for external components.
High voltage rail up to 1200 V
Driver current capability: 4 A sink/source @25°C
dV/dt transient immunity ±100 V/ns in full temperature range
Overall input-output propagation delay: 75 ns
Separate sink and source option for easy gate driving configuration
4 A Miller CLAMP dedicated pin option
UVLO function
Gate driving voltage up to 26 V
3.3 V, 5 V TTL/CMOS inputs with hysteresis
Temperature shut-down protection
Standby function
6 kV galvanic isolation
